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| HAF1001 Silicon P Channel MOS FET Series Power Switching / Over Temperature Shut-down Capability ADE-208-583 A (Z) 2nd Edition October 1997 Features This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumption, over current etc. * Logic level operation (-4 to -6 V Gate drive) * High endurance capability against to the short circuit * Built-in the over temperature shut-down circuit * Latch type shut-down operation (Need 0 voltage recovery) Outline HAF1001 Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note: 1. PW 10s, duty cycle 1 % 2. Value at Tc = 25C Symbol VDSS VGSS VGSS ID I D(pulse) I DR Pch Tch Tstg Note2 Note1 Ratings -60 -16 3 -15 -30 -15 50 150 -55 to +150 Unit V V V A A A W C C Typical Operation Characteristics Item Input voltage Symbol VIH VIL Input current (Gate non shut down) I IH1 I IH2 I IL Input current (Gate shut down) Shut down temperature Gate operation voltage I IH(sd)1 I IH(sd)2 Tsd VOP Min -3.5 -- -- -- -- -- -- -- -3.5 Typ -- -- -- -- -- -0.8 -0.35 175 -- Max -- -1.2 -100 -50 -1 -- -- -- -13 Unit V V A A A mA mA C V Vi = -8V, VDS = 0 Vi = -3.5V, VDS = 0 Vi = -1.2V, VDS = 0 Vi = -8V, VDS = 0 Vi = -3.5V, VDS = 0 Channel temperature Test Conditions 2 HAF1001 Electrical Characteristics (Ta = 25C) Item Drain current Drain current Drain to source breakdown voltage Gate to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol I D1 I D2 V(BR)DSS V(BR)GSS V(BR)GSS I GSS1 I GSS2 I GSS3 I GSS4 Input current (shut down) I GS(op)1 I GS(op)2 Zero gate voltege drain current I DSS Min -7 -- -60 -16 3 -- -- -- Typ -- -- -- -- -- -- -- -- Max -- -10 -- -- -- -100 -50 -1 Unit A mA V V V A A A A mA mA A V m m Test Conditions VGS = -3.5V, VDS = -2V VGS = -1.2V, VDS = -2V I D = -10mA, VGS = 0 I G = -100A, VDS = 0 I G = 100A, VDS = 0 VGS = -8V, VDS = 0 VGS = -3.5V, VDS = 0 VGS = -1.2V, VDS = 0 VGS = 2.4V, VDS = 0 VGS = -8V, VDS = 0 VGS = -3.5V, VDS = 0 VDS = -50 V, VGS = 0 I D = -1mA, VDS = -10V I D = -7.5A, VGS = -4V Note3 I D = -7.5A VGS = -10V Note3 5 -- 10 610 -- -- S pF I D = -7.5A, VDS = -10V Note3 VDS = -10V , VGS = 0 f = 1 MHz Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time Over load shut down operation time Note: Note4 -- -- -- -- -1.1 -- -- -- -0.8 -0.35 -- -- 100 70 100 -- -- -250 -2.25 130 90 Gate to source cutoff voltage VGS(off) Static drain to source on state RDS(on) resistance Static drain to source on state RDS(on) resistance Forward transfer admittance Output capacitance |yfs| Coss t d(on) tr t d(off) tf VDF t rr t os1 t os2 -- -- -- -- -- 7.5 36 32 29 -1.0 -- -- -- -- -- s s s s V I D = -7.5A, VGS = -5V RL = 4 I F = -15A, VGS = 0 I F = -15A, VGS = 0 diF/ dt =50A/s VGS = -5V, VDD = -12V VGS = -5V, VDD = -24V -- 200 -- ns -- -- 3.7 1 -- -- ms ms 3. Pulse test 4. Include the time shift based on increasing of channel temperature when operate under over load condition. 3 HAF1001 Main Characteristics 4 HAF1001 5 HAF1001 6 HAF1001 7 HAF1001 8 HAF1001 Package Dimensions Unit: mm 9 HAF1001 When using this document, keep the following in mind: 1. This document may, wholly or partially, be subject to change without notice. 2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without Hitachi's permission. 3. Hitachi will not be held responsible for any damage to the user that may result from accidents or any other reasons during operation of the user's unit according to this document. 4. Circuitry and other examples described herein are meant merely to indicate the characteristics and performance of Hitachi's semiconductor products. Hitachi assumes no responsibility for any intellectual property claims or other problems that may result from applications based on the examples described herein. 5. No license is granted by implication or otherwise under any patents or other rights of any third party or Hitachi, Ltd. 6. MEDICAL APPLICATIONS: Hitachi's products are not authorized for use in MEDICAL APPLICATIONS without the written consent of the appropriate officer of Hitachi's sales company. Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi's products are requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL APPLICATIONS. 10 |
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